1,826 research outputs found

    Adiabatic motion of a neutral spinning particle in an inhomogeneous magnetic field

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    The motion of a neutral particle with a magnetic moment in an inhomogeneous magnetic field is considered. This situation, occurring, for example, in a Stern-Gerlach experiment, is investigated from classical and semiclassical points of view. It is assumed that the magnetic field is strong or slowly varying in space, i.e., that adiabatic conditions hold. To the classical model, a systematic Lie-transform perturbation technique is applied up to second order in the adiabatic-expansion parameter. The averaged classical Hamiltonian contains not only terms representing fictitious electric and magnetic fields but also an additional velocity-dependent potential. The Hamiltonian of the quantum-mechanical system is diagonalized by means of a systematic WKB analysis for coupled wave equations up to second order in the adiabaticity parameter, which is coupled to Planck’s constant. An exact term-by-term correspondence with the averaged classical Hamiltonian is established, thus confirming the relevance of the additional velocity-dependent second-order contribution

    High power-high voltage waterload Patent

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    Variable water load for dissipating large amounts of electrical power during high voltage power supply test

    The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

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    The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements

    Properties of TiO2 thin films and a study of the TiO2-GaAs interface

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    Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C

    Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

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    The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon

    Professional Learning Analytics

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    Professional learning is an important component of productivity in contemporary work environments characterised by continual change. Learning for work takes various forms, from formal training to informal learning through work activities. In many work settings professionals collaborate via networked environments leaving various forms of digital traces and ‘clickstream’ data. These data can be exploited through learning analytics to make both formal and informal learning processes traceable and visible to support professionals with their learning. This chapter examines the state-of-the-art in professional learning analytics by considering the different ways professionals learn. As learning analytics techniques advance, the modelling techniques that underpin these methods become increasingly complex and the assumptions that underpin the analytics become ever-more embedded within the system. This chapter questions these assumptions and calls for a new, refreshed vision of professional learning analytics for the future which is based on how professionals learn. There is a need to broaden our thinking about the purpose of learning analytics build systems that effectively to address affective and motivational learning issues as well as technical and practical expertise; intelligently align individual learning activities with organisational learning goals and to be wary of attempts to embed professional expertise in code written by software developers, rather than by the professionals themselves. There are also ethical concerns about the degree of surveillance on learners as they work and learn with anxieties about whether people understand the (potentially serious) consequences [19]. Finally, learning analytics generally are developed for formal learning contexts, in schools, colleges and universities, missing opportunities to provide the support professionals need as they learn through everyday work

    The piezoresistive effect in electron irradiated silicon and its application to the improvement of semiconductor strain gages

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    Piezoresistive effect in electron irradiated silicon and application to improved semiconductor strain gage

    Seeking and sending signals: Remodelling teaching practice during the Covid-19 crisis

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    With the increased use of online teaching during the Covid-19 crisis, technology-mediated interactions have become central to the co-constructive nature of learning in universities. This research questions the efficacy of online teaching as it has been implemented during the crisis by examining critical forms of online interaction. These include the strategies used by academics to identify cues from students to allow them to adapt their teaching and the interactions of academics with students to help learners self-regulate their learning. The findings provide evidence that technology-mediated interactions can help academics develop perceptions of students, but this requires opportunities for spontaneous, free-form interactions online. Academics can signal proactive learning strategies to students to help them self-regulate their learning, though these strategies have to be made visible within the online environment. Academics need guidance in the use of technologies to support these fundamental practices

    Spectrometric study of condensed phase species of thorium and palladium-based modifiers in a complex matrix for electrothermal atomic absorption spectrometry

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    The chemical and morphological transformations of condensed phase species of a thorium-based modifier were studied over the temperature range 200–2500 °C, without and with the presence of aluminium and silicon as matrix components, and in some instances, arsenic as an analyte element. A similar study was also conducted with palladium as the modifier, for comparison. Results were derived using scanning electron microscopy (SEM), energy dispersive (ED) X-ray spectrometry, Raman microanalysis and attenuated total reflectance (ATR) Fourier transform-infrared (FT-IR) spectrometry. Comparable results were found using pyrolytic and non-pyrolytic graphite platforms, with processes occurring at slightly higher temperatures on the pyrolytic graphite platform. With thorium as the modifier, metal oxides were the predominant species on the platform surface at relatively low temperatures (<1500 °C), whereas metal phases became prevalent at high temperatures, when thorium and aluminium tended to behave independently from one other. Some spatial variations in the composition of the salt residues on different regions of the platform were observed (from the region closest to the slot in the tube, to the region furthest from the slot). Nonetheless, thorium metal remained on the graphite platform to higher temperatures than did aluminium metal. In the presence of arsenic, the existence of mixtures of thorium and arsenic oxides, just before the appearance temperature of gas phase arsenic atoms, was confirmed by SEM studies, ED X-ray spectra and Raman microanalysis. This suggests that any modifying effect of thorium on arsenic occurs while the modifier is in the oxide phase rather than in the metal phase. The presence of silicon added as silica, did not influence significantly the thermochemical behaviour of mixtures of thorium and aluminium. However, coexistence of silicon and arsenic oxides at the appearance temperature of the atomic absorption signal of arsenic was obtained, confirming that silicon can act as an internal modifier for arsenic. In the presence of palladium, aluminium exhibited greater interaction with the modifier; consequently, aluminium metal was retained on the platform surface to higher temperatures than thorium, which could explain how interference effects of aluminium on e.g. arsenic are avoided or reduced. Similarly, there was evidence for interaction of palladium and arsenic in the reduced state. However, when aluminium and silicon were present, the transformation of the palladium oxide to the metallic state was affected, which could diminish the modifying benefits of palladium for arsenic in the presence of aluminium
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